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STFI13N95K3 データシート(PDF) 4 Page - STMicroelectronics |
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STFI13N95K3 データシート(HTML) 4 Page - STMicroelectronics |
4 / 19 page Electrical characteristics STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 4/19 Doc ID15685 Rev 3 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS= 0 950 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 950V, VDS = 950V, Tc=125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID= 5 A 0.68 0.85 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS =100 V, f=1 MHz, VGS=0 - 1620 - pF Coss Output capacitance 117 pF Crss Reverse transfer capacitance 1.2 pF Co(tr) (1) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance time related VGS = 0, VDS = 0 to 760 V -115 - pF Co(er) (2) 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance energy related -131 - pF RG Intrinsic gate resistance f = 1MHz open drain - 2.3 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 760 V, ID = 10 A VGS =10 V (see Figure 20) - 51 10 30 - nC nC nC |
同様の部品番号 - STFI13N95K3 |
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同様の説明 - STFI13N95K3 |
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