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FMG2G50US60 データシート(PDF) 1 Page - Fairchild Semiconductor |
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FMG2G50US60 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page September 2001 FMG2G50US60 Rev. A IGBT ©2001 Fairchild Semiconductor Corporation Absolute Maximum Ratings T C = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Symbol Description FMG2G50US60 Units VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 25°C50 A ICM (1) Pulsed Collector Current 100 A IF Diode Continuous Forward Current @ TC = 100°C50 A IFM Diode Maximum Forward Current 100 A TSC Short Circuit Withstand Time @ TC = 100°C10 us PD Maximum Power Dissipation @ TC = 25°C 250 W TJ Operating Junction Temperature -40 to +150 °C Tstg Storage Temperature Range -40 to +125 °C Viso Isolation Voltage @ AC 1minute 2500 V Mounting Torque Power Terminals Screw : M5 2.0 N.m Mounting Screw : M5 2.0 N.m FMG2G50US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • UL Certified No. E209204 • Short Circuit rated 10us @ TC = 100°C, VGE = 15V • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 50A • High Input Impedance • Fast & Soft Anti-Parallel FWD Application • AC & DC Motor Controls • General Purpose Inverters • Robotics • Servo Controls •UPS Internal Circuit Diagram C1 E2 G1 E1 G2 E2 E1/C2 Package Code : 7PM-GA |
同様の部品番号 - FMG2G50US60 |
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同様の説明 - FMG2G50US60 |
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