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STP14NM50N データシート(PDF) 1 Page - STMicroelectronics |
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STP14NM50N データシート(HTML) 1 Page - STMicroelectronics |
1 / 26 page This is information on a product in full production. February 2013 Doc ID 16832 Rev 6 1/26 26 STB14NM50N, STD14NM50N, STF14NM50N, STI14NM50N, STP14NM50N N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK and TO-220 packages Datasheet − production data Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Order codes VDS @ TJmax RDS(on) max ID STB14NM50N STD14NM50N STF14NM50N STI14NM50N STP14NM50N 550 V 0.32 Ω 12 A 1 2 3 TO-220FP 1 3 D2PAK 1 3 DPAK 1 2 3 TO-220 1 2 3 I2PAK TAB TAB TAB TAB Table 1. Device summary Order codes Marking Package Packaging STB14NM50N 14NM50N D2PAK Tape and reel STD14NM50N DPAK STF14NM50N TO-220FP Tube STI14NM50N I2PAK STP14NM50N TO-220 www.st.com |
同様の部品番号 - STP14NM50N |
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同様の説明 - STP14NM50N |
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