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STD3PK50Z データシート(PDF) 1 Page - STMicroelectronics |
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STD3PK50Z データシート(HTML) 1 Page - STMicroelectronics |
1 / 15 page This is information on a product in full production. August 2012 Doc ID 18280 Rev 2 1/15 15 STD3PK50Z P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH™ Power MOSFET in a DPAK package Datasheet — production data Features ■ Gate charge minimized ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Very low intrinsic capacitance ■ Improved ESD capability Applications ■ Switching applications Description This device is a P-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Figure 1. Internal schematic diagram Note: For the P-channel Power MOSFETs actual polarity of voltages and current has to be reversed. Order code VDSS RDS(on)max ID PTOT STD3PK50Z 500 V < 4 Ω 2.8 A 70 W DPAK 1 3 TAB or TAB AM11279v1 Table 1. Device summary Order code Marking Package Packaging STD3PK50Z 3PK50Z DPAK Tape and reel www.st.com |
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