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FM28V020 データシート(PDF) 5 Page - Cypress Semiconductor

部品番号 FM28V020
部品情報  256Kbit Bytewide F-RAM Memory
Download  16 Pages
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メーカー  CYPRESS [Cypress Semiconductor]
ホームページ  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM28V020 データシート(HTML) 5 Page - Cypress Semiconductor

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FM28V020 - 32Kx8 F-RAM
Document Number: 001-86204 Rev. *A
Page 5 of 16
access. Precharge is user-initiated by driving at least
one of the chip enable signals to an inactive state. The
chip enable must remain inactive for at least the
minimum precharge time tPC.
Precharge is also activated by changing the upper
addess A(14:3). The current row is first closed prior
to accessing the new row. The device automatically
detects an upper order address change which starts a
precharge operation, the new address is latched, and
the new read data is valid within the tAA address
access time. Refer to the Read Cycle Timing 1
diagram on page 9. Likewise a similar sequence
occurs for write cycles. Refer to the Write Cycle
Timing 3 diagram on page 11.
The rate at which
random addresses can be issued is tRC and tWC,
respectively.
Endurance
The FM28V020 is capable of being accessed at least
10
14 times – reads or writes. An F-RAM memory
operates
with
a
read
and
restore
mechanism.
Therefore, an endurance cycle is applied on a row
basis. The F-RAM architecture is based on an array
of rows and columns. Rows are defined by A14-A3
and column addresses by A2-A0. The array is
organized as 4K rows of 8-bytes each. The entire row
is internally accessed once whether a single byte or
all eight bytes are read or written. Each byte in the
row is counted only once in an endurance calculation
if the addressing is contiguous in nature.
The user may choose to store CPU instructions and
run them from a certain address space. The table
below shows endurance calculations for 256-byte
repeating loop, which includes a starting address and
initial access, 7 page mode accesses, and a CE
precharge. The number of bus clocks needed to
complete an 8-byte read transaction is 1+7+1 or 9
clocks.
The
entire
loop
causes
each byte to
experience only one endurance cycle. F-RAM read
and write endurance is virtually unlimited.
Table 1. Time to Reach 100 Trillion Cycles for Repeating 256-byte Loop
Bus Freq
(MHz)
Bus Cycle
Time (ns)
256-byte
Transaction
Time ( s)
Endurance
Cycles/sec.
Endurance
Cycles/year
Years to
Reach 10
14
Cycles
10
100
28.8
34,720
1.09 x 10
12
91.7
5
200
57.6
17,360
5.47 x 10
11
182.8


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