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FM28V020 データシート(PDF) 2 Page - Cypress Semiconductor |
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FM28V020 データシート(HTML) 2 Page - Cypress Semiconductor |
2 / 16 page FM28V020 - 32Kx8 F-RAM Document Number: 001-86204 Rev. *A Page 2 of 16 Figure 1. Block Diagram Pin Descriptions Pin Name Type Pin Description A(14:0) Input Address inputs: The 15 address lines select one of 32,768 bytes in the F-RAM array. The address value is latched on the falling edge of /CE. Addresses A(2:0) are used for page mode read and write operations. /CE Input Chip Enable input: The device is selected and a new memory access begins on the falling edge of /CE. The entire address is latched internally at this point. /WE Input Write Enable: A write cycle begins when /WE is asserted. The rising edge causes the FM28V020 to write the data on the DQ bus to the F-RAM array. The falling edge of /WE latches a new column address for fast page mode write cycles. /OE Input Output Enable: When /OE is low, the FM28V020 drives the data bus when valid data is available. Deasserting /OE high tri-states the DQ pins. DQ(7:0) I/O Data: 8-bit bi-directional data bus for accessing the F-RAM array. VDD Supply Supply Voltage VSS Supply Ground Control Logic WE A(14:3) A(2:0) I/O Latch & Bus Driver OE DQ(7:0) 4K x 64 F-RAM Array A(14:0) Column Decoder . . . CE |
同様の部品番号 - FM28V020 |
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同様の説明 - FM28V020 |
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