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SI2305DS-T1 データシート(PDF) 1 Page - Vishay Siliconix |
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SI2305DS-T1 データシート(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Vishay Siliconix Si2305DS Document Number: 70833 S09-0133-Rev. E, 02-Feb-09 www.vishay.com 1 P-Channel 1.25-W, 1.8-V (G-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs: 1.8 V Rated PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) - 8 0.052 at VGS = - 4.5 V ± 3.5 0.071 at VGS = - 2.5 V ± 3 0.108 at VGS = - 1.8 V ± 2 G TO-236 (SOT-23) S D Top View 2 3 1 Si2305DS (A5)* * Marking Code Ordering Information: Si2305DS-T1 Si2305DS-T1-E3 (Lead (Pb)-free) Si2305DS-T1-GE3 (Lead (Pb)-free and Halogen-free) Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 8 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID ± 3.5 A TA = 70 °C ± 2.8 Pulsed Drain Current IDM ± 12 Continuous Source Current (Diode Conduction)a, b IS - 1.6 Maximum Power Dissipationa, b TA = 25 °C PD 1.25 W TA = 70 °C 0.8 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 100 °C/W Steady State 130 |
同様の部品番号 - SI2305DS-T1 |
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同様の説明 - SI2305DS-T1 |
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