SI4435DDY-T1-GE3 datasheet(3/10 Pages) VISHAY

部品番号	SI4435DDY-T1-GE3

部品情報	P-Channel 30-V (D-S) MOSFET

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Document Number: 68841

S09-0863-Rev. C, 18-May-09

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Vishay Siliconix

Si4435DDY

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

10

20

30

40

50

0.0

0.5

1.0

1.5

2.0

VGS =10 V thru 5 V

VGS =3 V

VGS =4 V

VDS - Drain-to-Source Voltage (V)

0

0.01

0.02

0.03

0.04

0.05

0

10203040

50

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

0

2

4

6

8

10

09

18

27

36

VDS =22.5 V

ID =9.1 A

VDS =15 V

VDS =7.5 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

0

600

1200

1800

2400

0

6

12

18

24

30

Ciss

Coss

Crss

VDS - Drain-to-Source Voltage (V)

0.6

0.9

1.2

1.5

1.8

- 50

- 25

0

25

50

75

100

125

150

VGS =10 V

VGS =4.5 V

ID =9.1 A

TJ -Junction Temperature (°C)

同様の部品番号 - SI4435DDY-T1-GE3

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI4435DDY-T1-GE3	217Kb / 9P	P-Channel 30 V (D-S) MOSFET 01-Jan-2022

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同様の説明 - SI4435DDY-T1-GE3

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