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CD0805-B160 データシート(PDF) 1 Page - Bourns Electronic Solutions |
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CD0805-B160 データシート(HTML) 1 Page - Bourns Electronic Solutions |
1 / 6 page Switching Chip Diode Series - 0805 / 1206 *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Features ■ Lead free as standard ■ RoHS compliant* ■ Leadless ■ High speed Applications ■ Cellular phones ■ PDAs ■ Desktop PCs and notebooks ■ Digital cameras ■ MP3 players General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package 0805 and 1206 size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Switching Diodes offer a forward current of 100 mA or 150 mA, a reverse voltage of 80 V or 75 V and also have a low leakage reverse current option. The diodes are lead-free with Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and government regulations on lead-free components. Bourns® Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes roll away much more difficult. Parameter Symbol CDxxxx-S0180 CDxxxx-S01575 CDxxxx-S0180R Unit Forward Voltage (Max.) VF 1.00 1.00 1.00 V (If = 100 mA) (If = 50 mA) (If = 100 mA) Capacitance Between Terminals (Max.) CT 3 pF (f = 100 MHz, Vr = 1 V DC) Reverse Recovery Time (Max.) trr 4 nS (Vr = 6V, If = 10 mA, RL = 50 Ω) Reverse Current (Max.) IR 0.1 2.5 0.05 µA (Vr = 80 V) (Vr = 75 V) (Vr = 75 V) Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CDxxxx-S0180 CDxxxx-S01575 CDxxxx-S0180R Unit Repetitive Peak Reverse Voltage VRRM 90 100 90 V Reverse Voltage VR 80 75 80 V Average Forward Current Io 100 150 100 mA Forward Current, Surge Peak Isurge 1* 4** 1* A Power Dissipation PD 300 350 300 mW Storage Temperature TSTG -55 to +125 °C Junction Temperature TJ -55 to +125 °C Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) * Condition: 8.3 ms single half sine-wave superimposed on rate load (JEDEC method). ** Condition: 1.0 µs single half sine-wave superimposed on rate load (JEDEC method). How To Order CD 0805 - S 01 80 R Common Code Chip Diode Package • 0805 • 1206 Model S = High Speed Switching Average Forward Current (Io) Code 01 = 100 mA 015 = 150 mA (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 80 = 80 V 75 = 75 V Reverse Current Suffix R = Low Leakage IR (CDxxxx-S0180R) CD0805-xxxx products are currently available, although not recom- mended for new designs. Use CD1005-xxxx products as an alternative. |
同様の部品番号 - CD0805-B160 |
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同様の説明 - CD0805-B160 |
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