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IRF5805TRPBF データシート(PDF) 1 Page - International Rectifier |
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IRF5805TRPBF データシート(HTML) 1 Page - International Rectifier |
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1 / 9 page  HEXFET® Power MOSFET 04/20/10 IRF5805PbF Absolute Maximum Ratings www.irf.com 1 Thermal Resistance Parameter Max. Units VDS Drain-Source Voltage -30 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.8 ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -3.0 A IDM Pulsed Drain Current -15 PD @TA = 25°C Maximum Power Dissipation 2W PD @TA = 70°C Maximum Power Dissipation 1.28 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Description VDSS RDS(on) max ID -30V 0.098@VGS = -10V - 3.8A 0.165@VGS = -4.5V - 3.0A Parameter Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W Top View 1 2 D G A D D D S 3 4 5 6 These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free TSOP-6 PD -95340A |
同様の部品番号 - IRF5805TRPBF |
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同様の説明 - IRF5805TRPBF |
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