データシートサーチシステム |
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IRF630STRR データシート(PDF) 6 Page - Vishay Siliconix |
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IRF630STRR データシート(HTML) 6 Page - Vishay Siliconix |
6 / 9 page www.vishay.com Document Number: 91032 6 S11-1047-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S Vishay Siliconix Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current 10 1 0.1 10-2 10-5 10-4 10-3 10-2 0.1 1 10 P DM t 1 t 2 t1, Rectangular Pulse Duration (s) Notes: 1. Duty Factor, D = t 1/t2 2. Peak T j = PDM x ZthJC + TC Single Pulse (Thermal Response) 0 − 0.5 0.2 0.1 0.05 0.02 0.01 91032_11 R g IAS 0.01 Ω tp D.U.T. L V DS + - V DD 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp 600 0 100 200 300 400 500 25 150 125 100 75 50 Starting TJ, Junction Temperature (°C) Bottom Top I D 4.0 A 5.7 A 9.0 A V DD = 50 V 91032_12c |
同様の部品番号 - IRF630STRR |
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同様の説明 - IRF630STRR |
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