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2N7002K-T1 データシート(PDF) 4 Page - Vishay Siliconix

部品番号 2N7002K-T1
部品情報  N-Channel 60-V (D-S) MOSFET
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Document Number: 71333
S09-0857-Rev. E, 18-May-09
Vishay Siliconix
2N7002K
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage Variance Over Temperature
1.2
1.5
1
100
1000
0.0
0.3
0.6
0.9
TJ = 125 °C
VSD - Source-to-Drain Voltage (V)
10
TJ = - 55 °C
VGS = 0 V
TJ = 25 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
1
2
3
4
5
02468
10
VGS - Gate-to-Source Voltage (V)
ID = 500 mA
ID = 200 mA
0.01
0
1
2.5
3
100
600
0.1
Time (s)
1.5
2
0.5
1
10
TA = 25 °C
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
10-3
10-2
1
10
600
10-1
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 350 °C/W
3. T JM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM


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