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SI4830ADY-T1-E3 データシート(PDF) 1 Page - Vishay Siliconix |
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SI4830ADY-T1-E3 データシート(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4830ADY Document Number: 72021 S09-0868-Rev. G, 18-May-09 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Schottky • Si4830DY Pin Compatible • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Asymmetrical Buck-Boost DC/DC Converter PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 30 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 at 1 A 2.0 Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 7.5 5.7 A TA = 70 °C 6.0 4.6 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 1.7 0.9 Maximum Power Dissipationa TA = 25 °C PD 2.0 1.1 W TA = 70 °C 1.3 0.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter MOSFET SCHOTTKY Symbol Typ. Max. Typ. Max. Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 52 62.5 53 62.5 °C/W Steady State 93 110 93 110 Maximum Junction-to-Foot (Drain) Steady State RthJF 35 40 35 40 S1/D2 D1 G1 D1 S2 G2 SO-8 5 6 7 8 Top View 2 3 4 1 N-Channel MOSFET D1 G1 S1 N-Channel MOSFET D2 G2 S2 Schottky Diode S1/D2 S1/D2 Ordering Information: Si4830ADY -T1-E3 (Lead (Pb)-free) Si4830ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) |
同様の部品番号 - SI4830ADY-T1-E3 |
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同様の説明 - SI4830ADY-T1-E3 |
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