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データシートサーチシステム |
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データシートサーチシステム |
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DZT5401 データシート(PDF) 1 Page - Diodes Incorporated |
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DZT5401 データシート(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DS31218 Rev. 2 – 2 1 of 4 www.diodes.com DZT5401 © Diodes Incorporated DZT5401 PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DZT5551) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 3) Mechanical Data • Case: SOT-223 • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish - Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking & Type Code Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.112 grams (approximate) 2 3 4 1 SOT-223 3 1 2,4 BASE COLLECTOR EMITTER 4 3 2 1 C C B E TOP VIEW Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -600 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation @TA = 25°C (Note 3) PD 1 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) RθJA 125 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V(BR)CBO -160 ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -150 ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -10μA, IC = 0 Collector Cutoff Current ICBO ⎯ -50 nA μA VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = 150°C Emitter Cutoff Current IEBO ⎯ -50 nA VEB = -3.0V, IC = 0 ON CHARACTERISTICS (Note 4) DC Current Gain hFE 50 60 50 ⎯ 240 ⎯ ⎯ IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.2 -0.5 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ -1.0 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 6.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 40 200 ⎯ VCE = -10V, IC = -1.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 100 300 MHz VCE = -10V, IC = -10mA, f = 100MHz Noise Figure NF ⎯ 8.0 dB VCE = -5.0V, IC = -200μA, RS = 10Ω, f = 1.0kHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Measured under pulsed conditions. Pulse width = 300ms. Duty cycle ≤ 2%. |
同様の部品番号 - DZT5401 |
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同様の説明 - DZT5401 |
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