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Si5315A-C-GM データシート(PDF) 4 Page - Silicon Laboratories |
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Si5315A-C-GM データシート(HTML) 4 Page - Silicon Laboratories |
4 / 54 page Si5315 4 Rev. 1.0 1. Electrical Specifications Table 1. Recommended Operating Conditions (VDD = 1.8 ±5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 ºC) Parameter Symbol Test Condition Min Typ Max Unit Temperature Range TA –40 25 85 ºC Supply Voltage VDD 3.3 V nominal 2.97 3.3 3.63 V 2.5 V nominal 2.25 2.5 2.75 V 1.8 V nominal 1.71 1.8 1.89 V Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions. Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise noted. Table 2. DC Characteristics (VDD = 1.8 ±5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 ºC) Parameter Symbol Test Condition Min Typ Max Units Supply Current (Supply current is independent of VDD) IDD LVPECL Format 644.53125 MHz Out All CKOUTs Enabled1 —251 279 mA LVPECL Format 644.53125 MHz Out Only 1 CKOUT Enabled1 —217 243 mA CMOS Format 25.00 MHz Out All CKOUTs Enabled2 —204 234 mA CMOS Format 25.00 MHz Out Only CKOUT1 Enabled2 —194 220 mA CKINn Input Pins Input Common Mode Voltage (Input Threshold Voltage) VICM 1.8 V ± 5% 0.9 — 1.4 V 2.5 V ± 10% 1.0 — 1.7 V 3.3 V ± 10% 1.1 — 1.95 V Input Resistance CKNRIN Single-ended 20 40 60 k Input Voltage Level Limits CKNVIN 0— VDD V Notes: 1. Refers to Si5315A speed grade. 2. Refers to Si5315B speed grade. 3. This is the amount of leakage that the 3L inputs can tolerate from an external driver. See Figure 3 on page 11. |
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