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BCX42E6327 データシート(PDF) 1 Page - Infineon Technologies AG |
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BCX42E6327 データシート(HTML) 1 Page - Infineon Technologies AG |
1 / 7 page 2011-10-04 1 BCX42 1 2 3 PNP Silicon AF and Switching Transistor • For general AF applications • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: BCX41 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 125 V Collector-base voltage VCBO 125 Emitter-base voltage VEBO 5 Collector current IC 800 mA Peak collector current, tp ≤ 10 ms ICM 1 A Base current IB 100 mA Peak base current IBM 200 Total power dissipation TS ≤ 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 215 K/W 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) |
同様の部品番号 - BCX42E6327 |
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同様の説明 - BCX42E6327 |
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