データシートサーチシステム |
|
SI4172DY-T1-GE3 データシート(PDF) 3 Page - Vishay Siliconix |
|
SI4172DY-T1-GE3 データシート(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 69000 S-82665-Rev. A, 03-Nov-08 www.vishay.com 3 Vishay Siliconix Si4172DY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 10 20 30 40 50 0 246 8 10 VGS =10thru 4 V VGS =3 V VDS - Drain-to-Source Voltage (V) 0.005 0.007 0.009 0.011 0.013 0.015 0 10203040 50 VGS =4.5 V VGS =10 V ID - Drain Current (A) 0 2 4 6 8 10 04 8 12 16 VDS = 24 V ID = 11 A VDS =15 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = 25 °C TC = 125 °C TC =- 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 300 600 900 1200 0 6 12 18 24 30 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS =4.5 V VGS =10 V ID = 11 A TJ -Junction Temperature (°C) |
同様の部品番号 - SI4172DY-T1-GE3 |
|
同様の説明 - SI4172DY-T1-GE3 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |