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FQD10N20C データシート(PDF) 2 Page - Fairchild Semiconductor

部品番号 FQD10N20C
部品情報  N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD10N20C データシート(HTML) 2 Page - Fairchild Semiconductor

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Electrical Characteristics
TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.2mH, IAS = 7.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.5A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
200
--
--
V
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.28
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
--
--
10
µA
VDS = 160 V, TC = 125°C
--
--
100
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.9 A
--
0.29
0.36
gFS
Forward Transconductance
VDS = 40 V, ID = 3.9 A
(Note 4)
--
5.6
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
395
510
pF
Coss
Output Capacitance
--
97
125
pF
Crss
Reverse Transfer Capacitance
--
40.5
53
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 100 V, ID = 9.5 A,
RG = 25 Ω
--
11
30
ns
tr
Turn-On Rise Time
--
92
190
ns
td(off)
Turn-Off Delay Time
--
70
150
ns
tf
Turn-Off Fall Time
--
72
160
ns
Qg
Total Gate Charge
VDS = 160 V, ID = 9.5 A,
VGS = 10 V
--
20
26
nC
Qgs
Gate-Source Charge
--
3.1
--
nC
Qgd
Gate-Drain Charge
--
10.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.8
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
31.2
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 7.8 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 9.5 A,
dIF / dt = 100 A/µs
(Note 4)
--
158
--
ns
Qrr
Reverse Recovery Charge
--
0.97
--
µC
©2009 Fairchild Semiconductor Corporation
FQD10N20C / FQU10N20C Rev. C1
www.fairchildsemi.com


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