FQA11N90C-F109 datasheet(2/8 Pages) FAIRCHILD

部品番号	FQA11N90C-F109

部品情報	FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11 A, 1.1 Ohm

Download	8 Pages

Scroll/Zoom	100%

メーカー	FAIRCHILD [Fairchild Semiconductor]

ホームページ	http://www.fairchildsemi.com

Logo

2 / 8 page

Package Marking and Ordering Information

Electrical Characteristics T

C = 25°C unless otherwise noted

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 15mH, IAS =11.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 11.0A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width

≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FQA11N90C

FQA11N90C_F109

TO-3PN

--

30

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

900

--

V

∆BVDSS/

∆TJ

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C

--

1.02

--

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 900 V, VGS = 0 V

--

10

µA

VDS = 720 V, TC = 125°C

--

100

µA

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

-100

nA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA3.0

--

5.0

V

RDS(on)

Static Drain-Source On-Resistance

VGS = 10 V, ID = 5.5 A

--

0.91

1.1

Ω

gFS

Forward Transconductance

VDS = 50 V, ID = 5.5 A

(Note 4)

--

9.0

--

S

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

--

2530

3290

pF

Coss

Output Capacitance

--

215

280

pF

Crss

Reverse Transfer Capacitance

--

23

30

pF

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 450 V, ID = 11.0A,

RG = 25 Ω

(Note 4, 5)

--

60

130

ns

tr

Turn-On Rise Time

--

130

270

ns

td(off)

Turn-Off Delay Time

--

130

270

ns

tf

Turn-Off Fall Time

--

85

180

ns

Qg

Total Gate Charge

VDS = 720 V, ID = 11.0A,

VGS = 10 V

(Note 4, 5)

--

60

80

nC

Qgs

Gate-Source Charge

--

13

--

nC

Qgd

Gate-Drain Charge

--

25

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

11.0

A

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

44

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS =11.0 A

--

1.4

V

trr

Reverse Recovery Time

VGS = 0 V, IS = 11.0 A,

dIF / dt = 100 A/µs

(Note 4)

--

1000

--

ns

Qrr

Reverse Recovery Charge

--

17.0

--

µC

2

www.fairchildsemi.com

FQA11N90C_F109 Rev.

C0

同様の部品番号 - FQA11N90C-F109

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	FQA11N90C	707Kb / 8P	900V N-Channel MOSFET
	FQA11N90C	817Kb / 9P	900V N-Channel MOSFET
	FQA11N90C	823Kb / 8P	900V N-Channel MOSFET
Inchange Semiconductor ...	FQA11N90C	362Kb / 2P	isc N-Channel MOSFET Transistor
Fairchild Semiconductor	FQA11N90C	817Kb / 9P	900V N-Channel MOSFET

More results

同様の説明 - FQA11N90C-F109

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	FQPF9N90CT	1Mb / 10P	N-Channel QFET MOSFET 900 V, 8.0 A, 1.4 Ohm
ON Semiconductor	FQA9N90C-F109	1Mb / 9P	N-Channel QFET® MOSFET 900 V, 9 A, 1.4 Ω December-2017, Rev 3
ON Semiconductor	FQA9N90-F109	1Mb / 9P	N-Channel QFET® MOSFET 900 V, 8.6 A, 1.3 Ω September-2017, Rev. 3
Fairchild Semiconductor	FQU5N40TU	735Kb / 9P	N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ohm
	FQU5N60CTU	1Mb / 9P	N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ohm
	FQN1N50CTA	3Mb / 8P	N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ohm
	FQT1N60CTF-WS	1Mb / 8P	N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm
	FQB1P50TM	726Kb / 9P	P-Channel QFET MOSFET - 500 V, - 1.5 A, 10.5 Ohm
	FQNL2N50BTA	786Kb / 8P	N-Channel QFET MOSFET 500 V, 0.35 A, 5.3
	FQD5N20LTM	863Kb / 8P	N-Channel QFET MOSFET 200 V, 3.8 A, 1.2