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FOD817B3SD データシート(PDF) 4 Page - Fairchild Semiconductor |
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FOD817B3SD データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 12 page ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 1.1.5 4 Electrical Characteristics (T A = 25°C Unless otherwise specified.) (Continued) Isolation Characteristics *Typical values at TA = 25°C Notes: 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to page 7. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. Symbol Characteristic Device Test Conditions Min. Typ.* Max. Units VISO Input-Output Isolation Voltage(3) FOD814, FOD817 f = 60Hz, t = 1 min, II-O ≤ 2µA 5000 Vac(rms) RISO Isolation Resistance FOD814, FOD817 VI-O = 500VDC 5x1010 1x1011 Ω CISO Isolation Capacitance FOD814, FOD817 VI-O = 0, f = 1 MHz 0.6 1.0 pf |
同様の部品番号 - FOD817B3SD |
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同様の説明 - FOD817B3SD |
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