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STB18NM80 データシート(PDF) 5 Page - STMicroelectronics |
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STB18NM80 データシート(HTML) 5 Page - STMicroelectronics |
5 / 21 page STB18NM80, STF18NM80, STP18NM80, STW18NM80 Electrical characteristics Doc ID 15421 Rev 5 5/21 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 400 V, ID = 8.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16 and Figure 21) - 18 28 96 50 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 17 68 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 17 A, VGS = 0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs, VDD = 100 V, (see Figure 18) - 618 9.6 31.2 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs, VDD = 100 V, Tj=150°C (see Figure 18) - 822 13 31.8 ns µC A |
同様の部品番号 - STB18NM80 |
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同様の説明 - STB18NM80 |
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