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HUF75337G3 データシート(PDF) 2 Page - Fairchild Semiconductor

部品番号. HUF75337G3
部品情報  75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs
ダウンロード  10 Pages
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
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HUF75337G3 Datasheet(HTML) 2 Page - Fairchild Semiconductor

 
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©2001 Fairchild Semiconductor Corporation
HUF75337G3, HUF75337P3, HUF75337S3S Rev. B
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS
55
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . VDGR
55
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
75
Figure 4
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Figure 6
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
175
1.17
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25
oC to 150oC.
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 11)
55
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 50V, VGS = 0V
-
-
1
µA
VDS = 45V, VGS = 0V, TC = 150
oC-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 10)
2
-
4
V
Drain to Source On Resistance
rDS(ON)
ID = 75A, VGS = 10V (Figure 9)
-
0.011
0.014
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
RθJC
(Figure 3)
-
-
0.85
oC/W
Thermal Resistance Junction to Ambient
RθJA
TO-247
-
-
30
oC/W
TO-220AB, TO-263AB
-
-
62
oC/W
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
VDD = 30V, ID ≅ 75A,
RL = 0.4Ω, VGS = 10V,
RGS = 6.2Ω
--
100
ns
Turn-On Delay Time
td(ON)
-13
-
ns
Rise Time
tr
-56
-
ns
Turn-Off Delay Time
td(OFF)
-31
-
ns
Fall Time
tf
-28
-
ns
Turn-Off Time
tOFF
-
-
88
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Qg(TOT)
VGS = 0V to 20V
VDD = 30V,
ID ≅ 75A,
RL = 0.4Ω
Ig(REF) = 1.0mA
(Figure 13)
-91
109
nC
Gate Charge at 10V
Qg(10)
VGS = 0V to 10V
-
51
61
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 2V
-
3.4
4.1
nC
Gate to Source Gate Charge
Qgs
-9-
nC
Reverse Transfer Capacitance
Qgd
-23
-
nC
HUF75337G3, HUF75337P3, HUF75337S3S


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