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データシートサーチシステム |
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データシートサーチシステム |
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HUF75344G3 データシート(PDF) 3 Page - Fairchild Semiconductor |
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HUF75344G3 データシート(HTML) 3 Page - Fairchild Semiconductor |
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3 / 10 page  ©2001 Fairchild Semiconductor Corporation HUF75344G3, HUF75344P3, HUF75344S3S Rev. B1 Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 75A - - 1.25 V Reverse Recovery Time trr ISD = 75A, dISD/dt = 100A/µs - - 105 ns Reverse Recovered Charge QRR ISD = 75A, dISD/dt = 100A/µs - - 210 nC Typical Performance Curves FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE TC, CASE TEMPERATURE ( oC) 0 0 25 50 75 100 150 0.2 0.4 0.6 0.8 1.0 1.2 125 175 TC, CASE TEMPERATURE ( oC) 20 40 60 80 50 75 100 125 150 175 0 25 t, RECTANGULAR PULSE DURATION (s) SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC PDM t1 t2 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.01 0.02 10-4 10-3 10-2 10-1 100 101 10-5 0.1 1 2 0.01 HUF75344G3, HUF75344P3, HUF75344S3S |
同様の部品番号 - HUF75344G3 |
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同様の説明 - HUF75344G3 |
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