2SA1640 datasheet(2/2 Pages) THINKISEMI

部品番号	2SA1640

部品情報	40 Watt Silicon PNP Switching Power Transistor

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メーカー	THINKISEMI [Thinki Semiconductor Co., Ltd.]

ホームページ	http://www.thinkisemi.com

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CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-10mA ; IB=0

B

-30

V

V(BR)CBO

Collector-base breakdown voltage

IC=-1mA ; IE=0

-30

V

V(BR)EBO

Emitter-base breakdown voltage

IE=-1mA ; IC=0

-5

V

VCEsat

Collector-emitter saturation voltage

IC=-3A ;IB=-0.1A

B

-0.4

V

VBEsat

Base-emitter saturation voltage

IC=-3A ;IB=-0.1A

B

-1.0

V

ICBO

Collector cut-off current

VCB=-30V; IE=0

-10

μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-10

μA

hFE

DC current gain

IC=-0.2A ; VCE=-2V

100

300

fT

Transition frequency

IC=-0.5A ; VCE=-10V

20

MHz

PACKAGE OUTLINE

TO-220F

http://www.thinkisemi.com/

Page 2/2

®

2SA1640

Dimensions In Millimeters

同様の部品番号 - 2SA1640

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	2SA1640	107Kb / 3P	Silicon PNP Power Transistors
Savantic, Inc.	2SA1640	204Kb / 3P	Silicon PNP Power Transistors
Quanzhou Jinmei Electro...	2SA1640	150Kb / 3P	Silicon PNP Power Transistors
Quanzhou Jinmei Electro...	2SA1640	150Kb / 3P	Silicon PNP Power Transistors
New Jersey Semi-Conduct...	2SA1640	177Kb / 2P	Silicon PNP Power Transistor

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