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HUFA75339G3 データシート(PDF) 4 Page - Fairchild Semiconductor

部品番号. HUFA75339G3
部品情報  75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
ダウンロード  10 Pages
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
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HUFA75339G3 Datasheet(HTML) 4 Page - Fairchild Semiconductor

 
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©2001 Fairchild Semiconductor Corporation
HUFA75339G3, HUFA75339P3, HUFA75339S3S Rev. B
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
Typical Performance Curves (Continued)
101
100
10-1
10-2
10-3
10-4
10-5
50
100
1000
TC = 25
oC
I = I25
175 - TC
150
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
VGS = 10V
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
100
500
10
100
1
1200
VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ = MAX RATED
TC = 25
oC
100
µs
10ms
1ms
VDSS(MAX) = 55V
LIMITED BY rDS(ON)
AREA MAY BE
OPERATION IN THIS
10
100
0.001
0.01
0.1
1
10
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R
≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
tAV, TIME IN AVALANCHE (ms)
STARTING TJ = 25
oC
STARTING TJ = 150
oC
500
0
30
60
90
120
150
01
23
4
PULSE DURATION = 80
µs
TC = 25
oC
VGS = 5V
VGS = 6V
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 10V
VGS = 20V
VGS = 7V
DUTY CYCLE = 0.5% MAX
0
30
60
90
120
150
0
1.5
3.0
4.5
6.0
7.5
-55oC
175oC
VGS, GATE TO SOURCE VOLTAGE (V)
25oC
VDD = 15V
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
HUFA75339G3, HUFA75339P3, HUFA75339S3S


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