データシートサーチシステム |
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HUFA76609D3S データシート(PDF) 4 Page - Fairchild Semiconductor |
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HUFA76609D3S データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2002 Fairchild Semiconductor Corporation HUFA76609D3, HUFA76609D3S Rev. B FIGURE 5. FORWARD BIAS SAFE OPERATING AREA NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE Typical Performance Curves (Continued) 1 10 100 1 10 100 300 0.1 100 µs 10ms 1ms VDS, DRAIN TO SOURCE VOLTAGE (V) LIMITED BY rDS(ON) AREA MAY BE OPERATION IN THIS TJ = MAX RATED TC = 25 oC SINGLE PULSE 10 100 0.001 0.01 0.1 1 10 1 tAV, TIME IN AVALANCHE (ms) tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R = 0 If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] STARTING TJ = 25 oC STARTING TJ = 150 oC 5 10 15 20 1.5 2.0 2.5 3.0 3.5 4.0 0 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDD = 15V TJ = 175 oC TJ = 25 oC TJ = -55 oC 5 10 15 20 0 123 4 5 0 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 3V VGS = 3.5V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC VGS = 4V VGS = 5V VGS = 10V 120 140 160 180 200 24 68 10 100 ID = 4A VGS, GATE TO SOURCE VOLTAGE (V) ID = 10A ID = 7A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TC = 25 oC 1.0 1.5 2.0 2.5 3.0 -80 -40 0 40 80 120 160 200 0.5 TJ, JUNCTION TEMPERATURE ( oC) VGS = 10V, ID = 10A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX HUFA76609D3, HUFA76609D3S |
同様の部品番号 - HUFA76609D3S |
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同様の説明 - HUFA76609D3S |
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