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L6565N データシート(PDF) 4 Page - STMicroelectronics

部品番号 L6565N
部品情報  QUASI-RESONANT SMPS CONTROLLER
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6565N データシート(HTML) 4 Page - STMicroelectronics

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L6565
4/17
GV
Voltage Gain
Open loop
60
80
dB
GB
Gain-Bandwidth Product
1
MHz
ICOMP
Source Current
VCOMP = 4V, VINV = 2.4 V
-2
-3.5
-5
mA
Sink Current
VCOMP = 4V, VINV = 2.6 V
2.5
4.5
mA
VCOMP
Upper Clamp Voltage
ISOURCE = 0.5 mA
5
5.5
V
Lower Clamp Voltage
ISINK = 0.5 mA
2.25
2.55
V
CURRENT SENSE COMPARATOR
ICS
Input Bias Current
VCS = 0
-0.05
-1
µA
td(H-L)
Delay to Output
200
450
ns
VCSx
Current Sense Reference Clamp
VCOMP = Upper clamp, VVFF = 0V
1.28
1.4
1.5
V
VCOMP = Upper clamp, VVFF = 1.5V
0.62
0.7
0.78
VCOMP = Upper clamp, VVFF = 3V
00.2
VCSdis
Hiccup-mode OCP level
1.85
2.0
2.2
V
ZERO CURRENT DETECTOR/ SYNCHRONIZATION
VZCDH
Upper Clamp Voltage
IZCD = 3mA
4.7
5.2
6.1
V
VZCDL
Lower Clamp Voltage
IZCD = - 3mA
0.3
0.65
1
V
VZCDA
Arming Voltage
(positive-going edge)
(1)
2.1
V
VZCDT
Triggering Voltage
(negative-going edge)
1.6
V
IZCDb
Input Bias Current
VZCD = 1 to 4.5 V
2
µA
IZCDsrc
Source Current Capability
-3
-10
mA
IZCDsnk Sink Current Capability
3
10
mA
VDIS
Disable Threshold
150
200
250
mV
IZCDr
Restart Current After Disable
VZCD < VDIS, Vcc > Vccoff
-70
-150
-230
µA
TBLANK
Blanking time after pin 7 high-to-
low transition
VCOMP ≥ 3.2 V
3.5
µs
VCOMP = 2.5 V
18
START TIMER
tSTART
Start Timer period
250
400
550
µs
GATE DRIVER
VOL
Dropout Voltage
IGDsource = 200mA
1.2
2
V
IGDsource = 20mA
0.7
1
VOH
IGDsink = 200mA
2
V
IGDsink = 20mA
0.3
tf
Current Fall Time
40
100
ns
tr
Current Rise Time
40
100
ns
IGDoff
IGD sink current
Vcc = 4 V, VGD = 1 V
5
10
mA
(1) Parameters guaranteed by design, not tested in production.
ELECTRICAL CHARACTERISTCS (continued)
(Tj = -25 to 125°C, VCC = 12V, Co = 1nF; unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit


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