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IRFP350A データシート(PDF) 1 Page - Fairchild Semiconductor |
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IRFP350A データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page IRFP350A BV DSS = 400 V R DS(on) = 0.3Ω I D = 17 A 400 17 10.8 68 ±30 1156 17 20.2 4.0 202 1.61 - 55 to +150 300 0.62 -- 40 -- 0.24 -- ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ V DS = 400V ♦ Low R DS(ON): 0.254Ω (Typ.) $GYDQFHG 3RZHU 026)(7 Thermal Resistance Junction-to-Case Case-to-Sink Junction-to-Ambient RθJC RθCS RθJA °C/W Characteristic Max. Units Symbol Typ. FEATURES Absolute Maximum Ratings Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds Characteristic Value Units Symbol IDM VGS EAS IAR EAR dv/dt ID PD TJ , TSTG TL A V mJ A mJ V/ns W W/ °C A °C VDSS V TO-3P 1.Gate 2. Drain 3. Source 3 2 1 ©1999 Fairchild Semiconductor Corporation Rev. B |
同様の部品番号 - IRFP350A |
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同様の説明 - IRFP350A |
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