BC817-40 datasheet(2/4 Pages) STMICROELECTRONICS

部品番号	BC817-40

部品情報	SMALL SIGNAL NPN TRANSISTORS

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2 / 4 page

Obsolete

Product(s)

- Obsolete

Product(s)

THERMAL DATA

Rthj-amb

• Thermal Resistance Junction-Ambient

Max

500

oC/W

• Device mounted on a PCB area of 1 cm2

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 20 V

TC = 150

oC

100

5

nA

µA

IEBO

Emitter Cut-off Current

(IE = 0)

VEB = 5 V

100

nA

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 10 mA

45

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 500 mA

IB = 50 mA

0.7

V

VBE(on)

∗ Base-Emitter On

Voltage

IC = 500 mA

VCE = 1 V

1.2

V

hFE

∗

DC Current Gain

IC = 100 mA

VCE = 1 V

for BC817-25

for BC817-40

160

250

400

600

fT

Transition Frequency

IC = 10 mA VCE = 5 V f =100 MHz

100

MHz

CCBO

Collector-Base

Capacitance

IE = 0

VCB = 10 V

f = 1 MHz

8

pF

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

BC817-25 / BC817-40

2/4

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