IRL520A datasheet(1/7 Pages) FAIRCHILD

部品番号	IRL520A

部品情報	Advenced Power MOSFET

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IRL520A

BV

DSS = 100 V

R

DS(on) = 0.22Ω

I

D = 9.2 A

100

9.2

6.5

32

±20

112

9.2

4.9

6.5

49

0.33

- 55 to +175

300

3.04

--

62.5

--

0.5

--

1

♦ Avalanche Rugged Technology

♦ Rugged Gate Oxide Technology

♦ Lower Input Capacitance

♦ Improved Gate Charge

♦ Extended Safe Operating Area

♦ Lower Leakage Current: 10µA (Max.) @ V

DS = 100V

♦ Lower R

DS(ON): 0.176Ω (Typ.)

$GYDQFHG 3RZHU 026)(7

Thermal Resistance

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

RθJC

RθCS

RθJA

°C/W

Characteristic

Max.

Units

Symbol

Typ.

FEATURES

Absolute Maximum Ratings

Drain-to-Source Voltage

Continuous Drain Current (TC=25°C)

Continuous Drain Current (TC=100°C)

Drain Current-Pulsed

(1)

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

(2)

Avalanche Current

(1)

Repetitive Avalanche Energy

(1)

Peak Diode Recovery dv/dt

(2)

Total Power Dissipation (TC=25°C)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

Characteristic

Value

Units

Symbol

IDM

VGS

EAS

IAR

EAR

dv/dt

ID

PD

TJ , TSTG

TL

A

V

mJ

A

mJ

V/ns

W

W/

°C

A

°C

VDSS

V

TO-220

1.Gate 2. Drain 3. Source

3

2

1

Rev. B

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