データシートサーチシステム |
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IRL610A データシート(PDF) 4 Page - Fairchild Semiconductor |
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IRL610A データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 7 page IRL610A -75 -50 -25 0 25 50 75 100 125 150 175 0.8 0.9 1.0 1.1 1.2 @ Notes : 1. V GS = 0 V 2. I D = 250 µA T J , Junction Temperature [ oC] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 single pulse 0.2 0.1 0.01 0.02 0.05 D=0.5 @ Notes : 1. Z θ JA (t)=69.4 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM -T A =P DM *Z θ JA (t) t 1 , Square Wave Pulse Duration [sec] -75 -50 -25 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 @ Notes : 1. V GS = 5 V 2. I D = 1.65 A T J , Junction Temperature [ oC] 10 -1 10 0 10 1 10 2 10 -3 10 -2 10 -1 10 0 10 1 DC 100 µs 1 ms 10 ms @ Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse Operation in This Area is Limited by R DS(on) V DS , Drain-Source Voltage [V] 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 T A , Ambient Temperature [ oC] 4 1&+$11(/ 32:(5 026)(7 Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature Fig 11. Thermal Response Fig 10. Max. Drain Current vs. Ambient Temperature Fig 9. Max. Safe Operating Area P DM t 1 t 2 |
同様の部品番号 - IRL610A |
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同様の説明 - IRL610A |
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