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CSD17556Q5B データシート(PDF) 3 Page - Texas Instruments

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部品番号 CSD17556Q5B
部品情報  30V N-Channel NexFET Power MOSFETs
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メーカー  TI [Texas Instruments]
ホームページ  http://www.ti.com
Logo TI - Texas Instruments

CSD17556Q5B データシート(HTML) 3 Page - Texas Instruments

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GATE
Source
DRAIN
M0137-01
GATE
Source
DRAIN
M0137-02
CSD17556Q5B
www.ti.com
SLPS392 – MARCH 2013
Max RθJA = 50°C/W
Max RθJA = 125°C/W
when mounted on
when mounted on a
1 inch2 (6.45 cm2) of 2-
minimum pad area of
oz. (0.071-mm thick)
2-oz. (0.071-mm thick)
Cu.
Cu.
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Figure 1. Transient Thermal Impedance
Copyright © 2013, Texas Instruments Incorporated
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