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CSD22202W15 データシート(PDF) 1 Page - Texas Instruments |
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CSD22202W15 データシート(HTML) 1 Page - Texas Instruments |
1 / 12 page 0 3 6 9 12 15 18 21 24 27 30 0 1 2 3 4 5 6 − V GS - Gate-to- Source Voltage (V) TC = 25°C Id = −2A TC = 125ºC Id = −2A G001 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 Qg - Gate Charge (nC) ID = −2A VDS =−4V G001 G S S S S S D D D Gate Source Drain CSD22202W15 www.ti.com SLPS431 – JUNE 2013 P-Channel NexFET™ Power MOSFET Check for Samples: CSD22202W15 PRODUCT SUMMARY 1 FEATURES VDS Drain to Drain Voltage –8 V • Low Resistance Qg Gate Charge Total (–4.5V) 6.5 nC • Small Footprint 1.5-mm × 1.5-mm Qgd Gate Charge Gate to Drain 1.0 nC • Pb Free VGS = –2.5V 14.5 m Ω RDS(on) Drain to Source On Resistance VGS = –4.5V 10.2 m Ω • Gate ESD Protection VGS(th) Threshold Voltage –0.8 V • RoHS Compliant • Halogen Free . • Gate-Source Voltage Clamp ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS 1.5-mm × 1.5-mm 7-Inch Tape and CSD22202W15 3000 Wafer BGA Package Reel Reel • Battery Management • Battery Protection . • Load Switch Applications ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE UNIT DESCRIPTION VDS Drain to Source Voltage –8 V The device has been designed to deliver the lowest VGS Gate to Source Voltage –6.0 V on resistance and gate charge in the smallest outline Continuous Drain Current(1) (Silicon -10 A possible with excellent thermal characteristics in an Limitted) ID ultra low profile. Low on resistance coupled with the Pulsed Drain Current(2) -48 A small footprint and low profile make the device ideal IG Continuous Gate Current(3) -0.5 A for battery operated space constrained applications. PD Power Dissipation(1) 1.5 W TJ, Operating Junction and Storage –55 to 150 °C Top View and Circuit Configuration TSTG Temperature Range (1) RθJA = 75°C/W on 1in 2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300μs, duty cycle ≤2% (3) Limited by gate resistance. RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Copyright © 2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
同様の部品番号 - CSD22202W15 |
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同様の説明 - CSD22202W15 |
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