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CSD22202W15 データシート(PDF) 1 Page - Texas Instruments

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部品番号 CSD22202W15
部品情報  P-Channel NexFET Power MOSFET
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メーカー  TI [Texas Instruments]
ホームページ  http://www.ti.com
Logo TI - Texas Instruments

CSD22202W15 データシート(HTML) 1 Page - Texas Instruments

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0
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6
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15
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30
0
1
2
3
4
5
6
− V
GS - Gate-to- Source Voltage (V)
TC = 25°C Id = −2A
TC = 125ºC Id = −2A
G001
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
Qg - Gate Charge (nC)
ID = −2A
VDS =−4V
G001
G
S
S
S
S
S
D
D
D
Gate
Source
Drain
CSD22202W15
www.ti.com
SLPS431 – JUNE 2013
P-Channel NexFET™ Power MOSFET
Check for Samples: CSD22202W15
PRODUCT SUMMARY
1
FEATURES
VDS
Drain to Drain Voltage
–8
V
Low Resistance
Qg
Gate Charge Total (–4.5V)
6.5
nC
Small Footprint 1.5-mm × 1.5-mm
Qgd
Gate Charge Gate to Drain
1.0
nC
Pb Free
VGS = –2.5V
14.5
m
RDS(on)
Drain to Source On Resistance
VGS = –4.5V
10.2
m
Gate ESD Protection
VGS(th)
Threshold Voltage
–0.8
V
RoHS Compliant
Halogen Free
.
Gate-Source Voltage Clamp
ORDERING INFORMATION
Device
Package
Media
Qty
Ship
APPLICATIONS
1.5-mm × 1.5-mm
7-Inch
Tape and
CSD22202W15
3000
Wafer BGA Package
Reel
Reel
Battery Management
Battery Protection
.
Load Switch Applications
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
DESCRIPTION
VDS
Drain to Source Voltage
–8
V
The device has been designed to deliver the lowest
VGS
Gate to Source Voltage
–6.0
V
on resistance and gate charge in the smallest outline
Continuous Drain Current(1) (Silicon
-10
A
possible with excellent thermal characteristics in an
Limitted)
ID
ultra low profile. Low on resistance coupled with the
Pulsed Drain Current(2)
-48
A
small footprint and low profile make the device ideal
IG
Continuous Gate Current(3)
-0.5
A
for battery operated space constrained applications.
PD
Power Dissipation(1)
1.5
W
TJ,
Operating Junction and Storage
–55 to 150
°C
Top View and Circuit Configuration
TSTG
Temperature Range
(1) RθJA = 75°C/W on 1in
2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width
≤300μs, duty cycle ≤2%
(3) Limited by gate resistance.
RDS(on) vs VGS
GATE CHARGE
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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