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2N2218A データシート(PDF) 1 Page - Comset Semiconductor |
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2N2218A データシート(HTML) 1 Page - Comset Semiconductor |
1 / 4 page NPN 2N2218 – 2N2218A 2N2219 – 2N2219A 1 | 4 S SW WIIT TC CH HIIN NG G S SIIL LIIC CO ON N T TR RA AN NS SIIS ST TO OR RS S The 2N2218-A and 2N2219-A are NPN transistors mounted in TO-39 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N2218 2N2219 2N2218 A 2N2219 A VCEO Collector-Emitter Voltage 30 40 V VCBO Collector-Base Voltage 60 75 V VEBO Emitter-Base Voltage 5 6 V IC Collector Current 800 mA PD Total Power Dissipation Tamb = 25° 0.8 W Tcase= 25° 3 TJ Junction Temperature 175 °C TStg Storage Temperature range -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to ambient in free air 50 °C/W RthJ-c Thermal Resistance, Junction to case 187.5 °C/W |
同様の部品番号 - 2N2218A |
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同様の説明 - 2N2218A |
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