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KA3S0765R-YDTU データシート(PDF) 3 Page - Fairchild Semiconductor |
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KA3S0765R-YDTU データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 14 page KA3S0765R/KA3S0765RF 3 Electrical Characteristics (SFET part) (Ta = 25 °C unless otherwise specified) Note: Pulse test: Pulse width < 300 µS, duty cycle < 2% Characteristic Symbol Test condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS VGS=0V, ID=50 µA 650 - - V Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V -- 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125 °C - - 200 mA Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=4.0A - 1.25 1.6 W Forward transconductance (note) gfs VDS=15V, ID=4.0A 3.0 - - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1600 - pF Output capacitance Coss - 310 - Reverse transfer capacitance Crss - 120 - Turn on delay time td(on) VDD=0.5BVDSS, ID=7.0A (MOSFET switching time are essentially independent of operating temperature) -25 - nS Rise time tr -55 - Turn off delay time td(off) -80 - Fall time tf -50 - Total gate charge (gate-source+gate-drain) Qg VGS=10V, ID=7.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) - - 72 nC Gate-source charge Qgs -9.3 - Gate-drain (Miller) charge Qgd - 29.3 - S 1 R ---- = |
同様の部品番号 - KA3S0765R-YDTU |
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