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KA5P0680CYDTU データシート(PDF) 2 Page - Fairchild Semiconductor |
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KA5P0680CYDTU データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page KA5P0680C 2 Absolute Maximum Ratings (Ta=25 °C, unless otherwise specified) Note: 1. Tj = 25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 24mH, starting Tj = 25 °C 4. L = 13 µH, starting Tj = 25°C Parameter Symbol Value Unit Drain-Gate Voltage (RGS=1M Ω)VDGR 800 V Gate-Source (GND) Voltage VGS ±30 V Drain Current Pulsed (2) IDM 24.0 ADC Single Pulsed Avalanche Energy (3) EAS 455 mJ Avalanche Current (4) IAS 27 A Continuous Drain Current (TC=25 °C) ID 6.0 ADC Continuous Drain Current (TC=100 °C) ID 4.0 ADC Maximum Supply Voltage VCC,MAX 30 V Input Voltage Range VFB -0.3 to 7V V Total Power Dissipation PD 150 W Darting 1.21 W/ °C Operating Ambient Temperature TA -25 to +85 °C Storage Temperature TSTG -55 to +150 °C |
同様の部品番号 - KA5P0680CYDTU |
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同様の説明 - KA5P0680CYDTU |
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