DESCRIPTION

2SA1235 is a super mini silicon NPN epitaxial type

transistor designed with high collector current,small Vce(sat).

Complementary with 2SC3440.

.

FEATURE

●Low collector to emitter saturation voltage.

VCE(sat)=-0.2V typ

●Excellent linearity of DC forward current gain.

●Super mini package for easy mounting.

●High gain band width product

fT=180MHz typ

APPLICATION

Small type motor drive, relay drive, power supply.

Marking

AE

AF

AG

hFE

150 to 300

250 to 500

400 to 800

.

〈SMALL-SIGNAL TRANSISTOR〉

2SA1365

FOR HIGH CURRENT DRIVE APPLICATION

SILICON PNP EPITAXIAL TYPE

OUTLINE DRAWING

Unit：ｍｍ

Note)

The dimension without tolerance represent central value

.

Symbol

Parameter

Ratings

Unit

V

CBO

Collector to Base voltage

-25

V

V

EBO

Emitter to Base voltage

-4

V

V

CEO

Collector to Emitter voltage

-20

V

I

CM

Peak Collector current

-1

A

I

C

Collector current

-700

mA

200

P

C

Collector dissipation (Ta=25℃)

※350

mW

T

j

Junction temperature

＋125

℃

T

stg

Storage temperature

-55～＋125

℃

※

package mounted on substrate.

Limits

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

C to B break down voltage

I

-25

-

-

V

E to B break down voltage

I

-4

-

-

V

C to E break down voltage

I

-20

-

-

V

Collector cut off current

V

-

-

-1

μA

Emitter cut off current

V

-

-

-1

μA

DC forward current gain

hFE

V

150

-

800

C to E Saturation Vlotage

VCE(sat)

I

-

-0.2

-0.5

V

Gain band width product

fT

V

100

180

-

MHz

※） It shows hFE classification in below table

JEITA：SC-59

JEDEC：Similar to TO-236

TERMINAL CONNECTER

①：BASE

②：EMITTER

③：COLLECTOR

ISAHAYA ELECTRONICS CORPORATION

TYPE NAME

hFE ITEM