BFX89 – BFY90

25/10/2012

COMSET SEMICONDUCTORS

1/4

WIDE BAND VHF/UHF AMPLIFIER

The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using

interdigitated base emitter geometry. They are particulary designed for use in wide band

capacitance, excellent cross modulation properties and very low noise performance. The

BFY90 is complementary to the BFR99A. Typical applications include telecommunication

and radio communication equipment.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage ( IB = 0)

15

V

Collector-Emitter Voltage ( RBE

≤50Ω )

30

V

Collector-Base Voltage ( IE= 0)

30

V

Collector-Base Voltage ( IC = 0)

2.5

V

Collector Current

25

mA

Collector Peak Current

50

mA

Ptot

Total Power Dissipation at Tamb

≤ 25 °C

200

mW

Tstg, Tj

Storage and Junction Temperature

-65 to 200

°C

DESCRIPTION :

• SILICON PLANAR EPITAXIAL

TRANSISTORS

• TO-72 METAL CASE

• VERY LOW NOISE

APPLICATIONS :

• TELECOMMUNICATIONS

• WIDE BAND UHF AMPLIFIER

• RADIO COMMUNICATIONS