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FCB11N60 データシート(PDF) 4 Page - Fairchild Semiconductor |
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FCB11N60 データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page 4 www.fairchildsemi.com FCB11N60 Rev. A1 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes : 1. V GS = 0 V 2. I D = 250µA T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * Notes : 1. V GS = 10 V 2. I D = 5.5 A T J, Junction Temperature [ oC] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 Operation in This Area is Limited by R DS(on) DC 10 ms 1 ms 100 us * Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0.0 2.5 5.0 7.5 10.0 12.5 T C, Case Temperature [ oC] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * N o te s : 1 . Z θ JC (t) = 1 .0 oC/W Max. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P DM * Z θ JC (t) s ingle pulse D= 0 .5 0.02 0.2 0.05 0.1 0.01 t 1, S q u a r e W a v e P u ls e D u r a tio n [s e c ] t1 PDM t2 |
同様の部品番号 - FCB11N60 |
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同様の説明 - FCB11N60 |
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