FQD2N60CTM datasheet(4/9 Pages) FAIRCHILD

部品番号	FQD2N60CTM

部品情報	N-Channel QFET짰 MOSFET

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4

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

vs. Temperature

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Typical Drain Current Slope

Figure 12. Typical Drain-Source Voltage

vs. Gate Resistance

Slope vs. Gate Resistance

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

Notes:

※

1. V

GS = 0V

2. I

D = 250µA

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes:

※

1. V

GS =10 V

2. I

D =0.95A

T

J, Junction Temperature [

oC]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

100 ms

DC

10 ms

1 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

Notes :

※

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

V

DS, Drain-Source Voltage [V]

25

50

75

100

125

150

0.0

0.4

0.8

1.2

1.6

2.0

T

C, Case Temperature [

]

℃

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-1

10

0

No te s :

※

1 . Z

θ JC ( t) = 2. 87

/W M a x .

℃

2 . D u ty F a c to r, D = t

1 /t 2

3 . T

JM - T C = P DM * Z θ JC (t)

s ing le pu ls e

D= 0 .5

0.02

0.2

0.0 5

0.1

0.0 1

t

1, S q ua r e W a ve P u l s e D u r a t i on [s ec]

t1

PDM

t2

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©200

9 Fairchild Semiconductor Corporation

FQD2N60C / FQU2N60C Rev.

C0

同様の部品番号 - FQD2N60CTM

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ON Semiconductor	FQD2N60CTM	979Kb / 8P	N-Channel QFET짰 MOSFET 600 V, 1.9 A, 4.7 廓 October-2017,Rev.2

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