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KSD882G データシート(PDF) 1 Page - Fairchild Semiconductor |
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KSD882G データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted * PW ≤10ms, Duty Cycle≤50% Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: PW ≤350µs, Duty Cycle≤2% Pulsed hFE Classificntion Symbol Parameter Value Units VCBO Collector- Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter- Base Voltage 5 V IC Collector Current (DC) 3 A ICP *Collector Current (Pulse) 7 A IB Base Current 0.6 A PC Collector Dissipation (TC=25°C) 10 W PC Collector Dissipation (Ta=25°C) 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = 30V, IE = 0 1 µA IEBO Emitter Cut-off Current VEB = 3V, IC = 0 1 µA hFE1 hFE2 *DC Current Gain VCE = 2V, IC = 20mA VCE = 2V, IC = 1A 30 60 150 160 400 VCE(sat) *Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 0.3 0.5 V VBE(sat) *Base-Emitter Saturation Voltage IC = 2A, IB = 0.2A 1.0 2.0 V fT Current Gain Bandwidth Product VCE = 5V, IE = 0.1A 90 MHz Cob Output Capacitance VCB = 10V, IE = 0 f = 1MHz 45 pF Classification R O Y G hFE2 60 ~ 120 100 ~ 200 160 ~ 320 200 ~ 400 KSD882 Audio Frequency Power Amplifier Low Speed Switching • Complement to KSB772 1 TO-126 1. Emitter 2.Collector 3.Base |
同様の部品番号 - KSD882G |
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同様の説明 - KSD882G |
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