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TYN608RG データシート(PDF) 5 Page - STMicroelectronics |
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TYN608RG データシート(HTML) 5 Page - STMicroelectronics |
5 / 13 page TN805, TN815, TS820, TYN608 Characteristics Doc ID 7476 Rev 7 5/13 Figure 9. Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) for TS820 Figure 10. Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) for TS820 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0.01 0.10 1.00 10.00 R(k ) GK Ω dV/dt[R ] / dV/dt[ =220 ] GK Ω RGK Tj = 125°C V = 0.67 x V D DRM 0 20 40 60 80 100 120 140 160 180 200 220 0.0 2.5 5.0 7.5 10.0 12.5 15.0 C (nF) GK dV/dt[C ] / dV/dt[ =220 ] GK Ω RGK T V = 0.67 x V = 125°C R = 220 D DRM GK j Ω Figure 11. Surge peak on-state current versus number of cycles Figure 12. Non-repetitive surge peak on-state current and corresponding values of I2t 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 I (A) TSM Number of cycles Non repetitive T initial=25°C j Repetitive T =110°C C TN8 / TS8 TYN08 t =10ms p One cycle 0.01 0.10 1.00 10.00 10 100 1000 I (A), I t (A s) TSM 22 t (ms) p I t 2 ITSM T initial = 25°C j TN8 / TS8 TN8 / TS8 TYN08 TYN08 dI/dt limitation Sinusoidal pulse width tp < 10 ms Figure 13. On-state characteristics (maximum values) Figure 14. Thermal resistance junction to ambient versus copper surface under tab (DPAK) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10.0 50.0 I (A) TM V (V) TM Tj=max T =25°C j V =0.85V R =46m T max.: j t0 d Ω 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 S(cm²) R (°C/W) th(j-a) Epoxy printed circuit board FR4 copper thickness = 35 µm |
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