BC817-16L_11 datasheet(1/10 Pages) ONSEMI

部品番号	BC817-16L

部品情報	General Purpose Transistors NPN Silicon Collector ??Emitter Voltage VCEO 45

Download	10 Pages

Scroll/Zoom	100%

メーカー	ONSEMI [ON Semiconductor]

ホームページ	http://www.onsemi.com

Logo

1 / 10 page

November, 2011 − Rev. 11

1

Publication Order Number:

BC846ALT1/D

BC846ALT1G Series,

SBC846ALT1G Series

General Purpose

Transistors

NPN Silicon

Features

• Moisture Sensitivity Level: 1

• ESD Rating − Human Body Model: >4000 V

ESD Rating − Machine Model: >400 V

• AEC−Q101 Qualified and PPAP Capable

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BC846, SBC846

BC847, BC850, SBC847

BC848, BC849, SBC848

VCEO

65

45

30

Vdc

Collector−Base Voltage

BC846, SBC846

BC847, BC850, SBC847

BC848, BC849, SBC848

VCBO

80

50

30

Vdc

Emitter−Base Voltage

BC846, SBC846

BC847, BC850, SBC847

BC848, BC849, SBC848

VEBO

6.0

5.0

Vdc

Collector Current − Continuous

IC

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board,

(Note 1)

TA = 25°C

Derate above 25°C

PD

225

1.8

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient (Note 1)

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate (Note 2)

TA = 25°C

Derate above 25°C

PD

300

2.4

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient (Note 2)

RqJA

417

°C/W

Junction and Storage

Temperature Range

TJ, Tstg

−55 to

+150

°C

1. FR−5 = 1.0 0.75 0.062 in.

2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAM

1

2

3

COLLECTOR

3

1

BASE

2

EMITTER

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 12 of this data sheet.

ORDERING INFORMATION

1

XX M G

G

XX = Device Code

M

= Date Code*

G

=Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

同様の部品番号 - BC817-16L_11

メーカー	部品番号	データシート	部品情報
Motorola, Inc	BC817-16LT1	90Kb / 4P	CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
ON Semiconductor	BC817-16LT1	58Kb / 4P	General Purpose Transistors(NPN Silicon)? June, 2004 ??Rev. 6
Leshan Radio Company	BC817-16LT1	51Kb / 2P	General Purpose Transistors(NPN Silicon)
ON Semiconductor	BC817-16LT1G	58Kb / 4P	General Purpose Transistors(NPN Silicon)? June, 2004 ??Rev. 6
ON Semiconductor	BC817-16LT1G	125Kb / 10P	General Purpose Transistors October, 2010 ??Rev. 11

More results

同様の説明 - BC817-16L_11

メーカー	部品番号	データシート	部品情報
First Components Intern...	FMBT3904	529Kb / 2P	NPN General Purpose Transistor Collector - Emitter Voltage VCEO
	FMBT3906	61Kb / 2P	PNP General Purpose Transistor Collector - Emitter Voltage VCEO -40
	FMBT1815	69Kb / 2P	NPN Epitaxial Planar Transistor Collector - Emitter Voltage VCEO
	FMBT4401	71Kb / 2P	NPN Switching Transistor Collector - Emitter Voltage VCEO 40
Inchange Semiconductor ...	BU508A-2	534Kb / 3P	Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 900V (Min)
	2SA1441	121Kb / 2P	Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -60V(Min)
	BU120	190Kb / 2P	Collector-Emitter Sustaining Voltage-:VCEO(SUS) = 200V(Min)
	2SB1284	188Kb / 2P	Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -100V(Min.)
	2SA1444	121Kb / 2P	Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -60V(Min)
	BUY70A	195Kb / 2P	Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 400V(Min)