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IRF7304TRPBF データシート(PDF) 1 Page - International Rectifier

部品番号 IRF7304TRPBF
部品情報  Generation V Technology
Download  9 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF7304TRPBF データシート(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
PD - 95038
10/6/04
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual P-Channel Mosfet
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
IRF7304PbF
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
SO-8
Parameter
Max.
Units
ID @ TA = 25°C
10 Sec. Pulsed Drain Current, VGS @ -4.5V
-4.7
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-4.3
ID @ TA = 70°C
Continuous Drain Current, VGS @ -4.5V
-3.4
A
IDM
Pulsed Drain Current 
-17
PD@TA = 25°C
Power Dissipation
2.0
Linear Derating Factor
0.016
VGS
Gate-to-Source Voltage
±12
V
dv/dt
Peak Diode Recovery dv/dt ‚
-5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
W
W/°C
VDSS = -20V
RDS(on) = 0.090Ω
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient„
–––
62.5
°C/W
l
Lead-Free


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