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BC847BPN1 データシート(PDF) 5 Page - NXP Semiconductors |
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BC847BPN1 データシート(HTML) 5 Page - NXP Semiconductors |
5 / 14 page BC847BPN_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 18 February 2009 5 of 14 NXP Semiconductors BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 7. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current VCB =30V; IE = 0 A --15 nA VCB =30V; IE =0A; Tj = 150 °C --5 µA IEBO emitter-base cut-off current VEB =5V; IC = 0 A - - 100 nA hFE DC current gain VCE =5V; IC = 2 mA 200 - 450 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 100 mV IC = 100 mA; IB =5mA [1] - - 300 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 755 - mV VBE base-emitter voltage IC = 2 mA; VCE =5V TR1 (NPN) 580 655 700 mV TR2 (PNP) 600 655 750 mV Cc collector capacitance IE =ie = 0 A; VCB =10V; f=1MHz TR1 (NPN) - - 1.5 pF TR2 (PNP) - - 2.2 pF Ce emitter capacitance IC =ic = 0 A; VEB = 0.5 V; f=1MHz TR1 (NPN) - 11 - pF TR2 (PNP) - 10 - pF fT transition frequency IC = 10 mA; VCE =5V; f = 100 MHz 100 - - MHz |
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