IRFB3006GPBF datasheet(2/8 Pages) IRF

部品番号	IRFB3006GPBF

部品情報	High Efficiency Synchronous Rectification in SMPS

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メーカー	IRF [International Rectifier]

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IRFB3006GPbF

2

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Notes:

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 195A. Note that current

limitations arising from heating of the device leads may occur with

some lead mounting arrangements.

(Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.022mH

RG = 25Ω, IAS = 170A, VGS =10V. Part not recommended for use

above this value .

S

D

G

ISD ≤ 170A, di/dt ≤ 1360A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

Rθ is measured at TJ approximately 90°C.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

60

–––

V

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.07

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

2.1

2.5

m

Ω

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

IDSS

Drain-to-Source Leakage Current

–––

20

µA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

nA

Gate-to-Source Reverse Leakage

–––

-100

RG

Internal Gate Resistance

–––

2.0

–––

Ω

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

280

–––

S

Qg

Total Gate Charge

–––

200

300

nC

Qgs

Gate-to-Source Charge

–––

37

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

60

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

140

–––

td(on)

Turn-On Delay Time

–––

16

–––

ns

tr

Rise Time

–––

182

–––

td(off)

Turn-Off Delay Time

–––

118

–––

tf

Fall Time

–––

189

–––

Ciss

Input Capacitance

–––

8970

–––

pF

Coss

Output Capacitance

–––

1020

–––

Crss

Reverse Transfer Capacitance

–––

534

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1480 –––

Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 1920 –––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

IS

Continuous Source Current

–––

––– 270

A

(Body Diode)

ISM

Pulsed Source Current

–––

1080

A

(Body Diode)

Ãd

VSD

Diode Forward Voltage

–––

1.3

V

trr

Reverse Recovery Time

–––

44

–––

ns

TJ = 25°C

VR = 51V,

–––

48

–––

TJ = 125°C

IF = 170A

Qrr

Reverse Recovery Charge

–––

63

–––

nC TJ = 25°C

di/dt = 100A/µs

g

–––

77

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

2.4

–––

A

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VDS = 25V, ID = 170A

ID = 170A

VGS = 20V

VGS = -20V

MOSFET symbol

showing the

VDS =30V

Conditions

VGS = 10V g

VGS = 0V

VDS = 50V

ƒ = 1.0 MHz, See Fig. 5

VGS = 0V, VDS = 0V to 48V i, See Fig. 11

VGS = 0V, VDS = 0V to 48V h

TJ = 25°C, IS = 170A, VGS = 0V g

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 5mAd

VGS = 10V, ID = 170A g

VDS = VGS, ID = 250µA

VDS = 60V, VGS = 0V

VDS = 60V, VGS = 0V, TJ = 125°C

ID = 170A

RG = 2.7Ω

VGS = 10V g

VDD = 39V

ID = 170A, VDS =0V, VGS = 10V

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