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LM27403SQX データシート(PDF) 4 Page - Texas Instruments |
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LM27403SQX データシート(HTML) 4 Page - Texas Instruments |
4 / 49 page LM27403 SNVS896 A – AUGUST 2013 – REVISED SEPTEMBER 2013 www.ti.com ELECTRICAL CHARACTERISTICS At TJ = –40°C to +125°C and VVIN = 12 V, all parameters at zero power dissipation (unless otherwise noted). Minimum and maximum limits are ensured through test, design, or statistical correlation. Typical values represent the most likely parametric normal specifications at TJ = 25°C and are provided for reference purposes only. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT OPERATIONAL SPECIFICATIONS IQ Quiescent current VFB = 0.6 V (not switching) 3.5 5.0 mA IQ-SD Shutdown quiescent current VUVLO/EN = 0 V 25 45 µA REFERENCE VFB FB pin voltage accuracy 594 600 606 mV IFB FB pin bias current VFB = 0.65 V –165 0 165 nA INTERNAL UVLO UVLO Input undervoltage lockout VVIN rising, VVDD rising 2.6 2.7 2.8 V UVLO_hys UVLO hysteresis VVIN falling, VVDD falling 250 mV SWITCHING RFADJ = 4.12 kΩ 925 1050 1150 kHz FSW Switching frequency RFADJ = 20 kΩ 435 500 555 kHz RFADJ = 95.3 kΩ 185 215 250 kHz DMAX Maximum duty cycle FSW = 500 kHz 90% 93% TOFF-MIN Minimum off-time VFB = 0.5 V, FSW = 500 kHz 110 150 190 ns TON-MIN Minimum controllable on-time VFB = 0.7 V, FSW = 500 kHz 30 ns VDD SUBREGULATOR AND BOOT VDD Subregulator output voltage IVDD = 25 mA 4.2 4.7 5.3 V VDDVDO Dropout voltage IVDD = 15 mA, VVIN = 3.0 V 150 mV VDDCL VDD current limit VVDD = 4.0 V 106 mA IQBOOT CBOOT pin leakage current VCBOOT – VSW = 4.5 V 0.5 nA ERROR AMPLIFIER BW-3dB Error amplifier open-loop bandwidth 6 MHz AVOL Error amplifier dc gain 70 dB ISOURCE COMP source current VFB = 0.5 V 1 mA ISINK COMP sink current VFB = 0.7 V 100 µA VCOMP-MAX Maximum COMP voltage VFB = 0.5 V 3.9 V VCOMP-MIN Minimum COMP voltage VFB = 0.7 V 0.5 V OVERCURRENT PROTECTION Current limit comparator offset VCS_OFFSET –3.5 0 3.5 mV voltage VCS– = 3 V, ΔVBE = 59.4 mV (1), T J = 25°C 9.3 9.9 10.5 µA ICS Current limit offset current VCS– = 3 V, D+ shorted to D– 3.4 5.0 6.6 µA ICS-CV1 VVIN = 12 V 800 mV ICS compliance voltage VVIN – VCS–, ΔICS < 5% ICS-CV2 VVIN = 3 V 800 mV ICS-TC ICS temperature coefficient Referenced to ΔVBE (2) 160 187 212 nA/mV TCL-DELAY Current limit hiccup delay 5 ms GATE DRIVERS RDS(ON)1 IHG = 0.1 A (pullup) 1.5 Ω High-side MOSFET driver on-state VCBOOT – VSW = 4.5 V resistance RDS(ON)2 IHG = –0.1 A (pulldown) 1.0 Ω IDRV-HG-SRC Source current (pullup) 1.5 A High-side MOSFET driver peak CLOAD = 3 nF current IDRV-HG-SINK Sink current (pulldown) 2.0 A (1) The specified parameter is calculated based on a 2N3904 transistor at 25°C. (2) Multiply by 19.9 to scale from nA/mV to ppm/°C (assumes 2N3904 BJT temperature sensor with ideality factor η =1.004). 4 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: LM27403 |
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