2SC3356 datasheet(3/9 Pages) RENESAS

部品番号	2SC3356

部品情報	NPN Silicon RF Transistor

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2SC3356

R09DS0021EJ0300 Rev.3.00

Page 3 of 7

Jun 28, 2011

TYPICAL CHARACTERISTICS (TA = +25

°C, unless otherwise specified)

Collector Current IC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

200

50

100

10

20

15

10

0.5

50

VCE = 10 V

250

200

150

100

50

0

25

50

75

100

125

150

Ambient Temperature TA (˚C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

Free air

Collector to Base Voltage VCB (V)

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

2

1

0.5

0.3

0.5

0.2

1

2

5

10

30

20

f = 1 MHz

VCE = 10 V

Collector Current IC (mA)

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

10

2

5

0.2

0.5

1

0.1

1

5

10

50

0.1

0.5

100

VCE = 10 V

f = 1 GHz

Collector Current IC (mA)

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

15

10

0

5

0.5

1

10

50

570

VCE = 10 V

IC = 20 mA

Frequency f (GHz)

INSERTION POWER GAIN, MAG

vs. FREQUENCY

25

15

20

5

10

0

0.05

0.1

0.5

1

0.2

2

MAG

|S21e|

2

Remark The graphs indicate nominal characteristics.

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