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SS15P3S-M3 データシート(PDF) 1 Page - Vishay Siliconix |
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SS15P3S-M3 データシート(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 89128 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 13-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 19 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SMD Photovoltaic Solar Cell Protection Schottky Rectifier SS15P3S Vishay General Semiconductor New Product TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Notes (1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink (2) Free air, mounted on recommended copper pad area (3) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test PRIMARY CHARACTERISTICS IF(AV) 15 A VRRM 30 V IFSM 280 A EAS 20 mJ VF at IF = 15 A 0.42 V TJ max. 150 °C K 2 1 TO-277A (SMPC) eSMP ® Series Anode 1 Anode 2 Cathode K MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS15P3S UNIT Device marking code 153S Maximum repetitive peak reverse voltage VRRM 30 V Maximum DC forward current (fig. 1) IF 15 (1) 4.5 (2) A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 280 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 20 mJ Operating junction and storage temperature range TOP, TSTG - 55 to + 150 °C Junction temperature in DC forward current without reverse bias, t 1 h (3) TJ 200 °C |
同様の部品番号 - SS15P3S-M3 |
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同様の説明 - SS15P3S-M3 |
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