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SM8S12A データシート(PDF) 1 Page - Vishay Siliconix

部品番号 SM8S12A
部品情報  Surface Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SM8S12A データシート(HTML) 1 Page - Vishay Siliconix

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New Product
SM8S10 thru SM8S43A
www.vishay.com
Vishay General Semiconductor
Revision: 14-Sep-11
1
Document Number: 88387
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
•TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
Note
(1) Non-repetitive current pulse derated above TA = 25 °C
PRIMARY CHARACTERISTICS
VWM
10 V to 43 V
PPPM (10 x 1000 μs)
6600 W
PPPM (10 x 10 000 μs)
5200 W
PD
8 W
IFSM
700 A
TJ max.
175 °C
DO-218AB
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation
with 10/1000 μs waveform
PPPM
6600
W
with 10/10 000 μs waveform
5200
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
PD
8.0
W
Peak pulse current with 10/1000 μs waveform
IPPM (1)
See next table
A
Peak forward surge current 8.3 ms single half sine-wave
IFSM
700
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C


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